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BYM11-50-HE3 PDF预览

BYM11-50-HE3

更新时间: 2024-11-07 03:14:35
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 325K
描述
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC PACKAGE-2, Signal Diode

BYM11-50-HE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-213AB
包装说明:O-PELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.43
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-213ABJESD-30 代码:O-PELF-R2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.15 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:TIN SILVER
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:40

BYM11-50-HE3 数据手册

 浏览型号BYM11-50-HE3的Datasheet PDF文件第2页浏览型号BYM11-50-HE3的Datasheet PDF文件第3页浏览型号BYM11-50-HE3的Datasheet PDF文件第4页 
BYM11-50 thru BYM11-1000, RGL41A thru RGL41M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Junction Fast  
Switching Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 1000 V  
30 A  
150 ns, 250 ns, 500 ns  
1.3 V  
*
VF  
d
e
t
n
Tj max.  
175 °C  
e
t
a
P
*Glass-plastic encapsulation  
is covered by  
DO-213AB  
Patent No. 3,996,602,  
brazed-lead assembly to  
Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for high reliability  
condition  
Case: DO-213AB, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Patented glass-plastic encapsulation technique  
• Ideal for automated placement  
• Fast switching for high efficiency  
• Low leakage current  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Two bands indicate cathode end - 1st band  
denotes device type and 2nd band denotes repetitive  
peak reverse voltage rating  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols BYM  
BYM  
BYM  
BYM  
BYM  
BYM  
BYM  
Units  
11-50 11-100 11-200 11-400 11-600 11-800 11-1000  
Fast switching time device: 1st band is Red  
RGL  
41A  
RGL  
41B  
RGL  
41D  
RGL  
41G  
RGL  
41J  
RGL  
41K  
RGL  
41M  
Polarity color bands (2nd Band)  
Gray  
50  
Red  
100  
Orange Yellow Green  
Blue  
800  
Violet  
1000  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
A
Maximum RMS voltage  
35  
50  
70  
560  
800  
700  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
at TT = 55 °C  
IF(AV)  
1.0  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
30  
50  
A
Maximum full load reverse current, full cycle  
average at TA = 55 °C  
IR(AV)  
µA  
Operating junction and storage temperature range TJ,TSTG  
- 65 to + 175  
°C  
Document Number 88547  
22-Sep-05  
www.vishay.com  
1

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