Datasheet > BYM11-800-HE3

BYM11-800-HE3

更新时间： 2024-11-03 03:37:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	325K
描述
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC PACKAGE-2, Signal Diode

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中文翻译

获取价格

数据手册

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BYM11-800-HE3 数据手册

BYM11-50 thru BYM11-1000, RGL41A thru RGL41M

Vishay General Semiconductor

Surface Mount Glass Passivated Junction Fast

Switching Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

50 V to 1000 V

30 A

150 ns, 250 ns, 500 ns

1.3 V

V_F

T_jmax.

175 °C

*Glass-plastic encapsulation

is covered by

DO-213AB

Patent No. 3,996,602,

brazed-lead assembly to

Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for high reliability

condition

Case: DO-213AB, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Patented glass-plastic encapsulation technique

• Ideal for automated placement

• Fast switching for high efficiency

• Low leakage current

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: Two bands indicate cathode end - 1st band

denotes device type and 2nd band denotes repetitive

peak reverse voltage rating

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Typical Applications

For use in fast switching rectification of power supply,

inverters, converters, and freewheeling diodes for

consumer, automotive and Telecommunication

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbols BYM

BYM

Units

11-50 11-100 11-200 11-400 11-600 11-800 11-1000

Fast switching time device: 1st band is Red

RGL

41A

RGL

41B

RGL

41D

RGL

41G

RGL

41J

RGL

41K

RGL

41M

Polarity color bands (2nd Band)

Gray

Red

100

Orange Yellow Green

Blue

800

Violet

1000

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

Maximum RMS voltage

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

at T_T= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-

wave superimposed on rated load

I_FSM

Maximum full load reverse current, full cycle

average at T_A= 55 °C

I_R(AV)

µA

Operating junction and storage temperature range T_J,T_STG

- 65 to + 175

°C

Document Number 88547

22-Sep-05

www.vishay.com

12 3 4

中文翻译

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与BYM11-800-HE3相关器件

型号	品牌	获取价格	描述	数据表
BYM11-800-HE3/96	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sign
BYM11-800HE3/97	VISHAY	获取价格	DIODE GEN PURP 800V 1A DO213AB
BYM11-800-HE3/97	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sign
BYM11-800HE3_A/H	VISHAY	获取价格	DIODE GEN PURP 800V 1A DO213AB
BYM11-800HE3_A/I	VISHAY	获取价格	DIODE GEN PURP 800V 1A DO213AB
BYM11-XXX	VISHAY	获取价格	Surface Mount Glass Passivated Junction Fast Switching Rectifier
BYM12-100	VISHAY	获取价格	SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER
BYM12-100	SUNMATE	获取价格	1A plug-in fast recovery diode 100V DO-213 series
BYM12-100/25	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-213AB, PLASTIC, GL41, 2 PIN
BYM12-100/26	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-213AB, PLASTIC, GL41, 2 PIN

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