Datasheet > BYC8MB-650P

BYC8MB-650P

更新时间： 2024-04-09 19:01:30

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	421K
描述
Hyperfast power diode in a TO263 plastic package

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BYC8MB-650P 数据手册

WeEn Semiconductors

BYC8MB-650P

Hyperfast power diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Notes

Values

Unit

V_RRMrepetitive peak reverse

650

voltage

V_RWM

crest working reverse

voltage

650

V_R

reverse voltage

650

I_F(AV)

average forward current

δ = 0.5 ; square-wave pulse; T_mb≤ 127 °C;

Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward

current

δ = 0.5 ; t_p= 25 μs; T_mb≤ 127 °C;

square-wave pulse

non-repetitive peak

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

forward current

Fig. 4

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse

100

storage temperature

junction temperature

-65 to 175

°C

stg

T_j

I_F(AV)= I_F(RMS)× √δ

V_o= 2.097 V; R_s= 0.0464 Ω

a = form factor = I_F(RMS)/ I_F(AV)

V_o= 2.097 V; R_s= 0.0464 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

Fig. 2. Forward power dissipation as a function

of average forward current; sinusoidal

waveform; maximum values

BYC8MB-650P

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08 October 2023

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