5秒后页面跳转
BYC8X-600P,127 PDF预览

BYC8X-600P,127

更新时间: 2024-11-05 14:51:07
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
9页 180K
描述
BYC8X-600P

BYC8X-600P,127 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TO-220针数:2
Reach Compliance Code:not_compliant风险等级:5.7
Is Samacsys:NBase Number Matches:1

BYC8X-600P,127 数据手册

 浏览型号BYC8X-600P,127的Datasheet PDF文件第2页浏览型号BYC8X-600P,127的Datasheet PDF文件第3页浏览型号BYC8X-600P,127的Datasheet PDF文件第4页浏览型号BYC8X-600P,127的Datasheet PDF文件第5页浏览型号BYC8X-600P,127的Datasheet PDF文件第6页浏览型号BYC8X-600P,127的Datasheet PDF文件第7页 
F
0
2
2
-
O
T
BYC8X-600P  
Hyperfast power diode  
3 January 2014  
Product data sheet  
1. General description  
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.  
2. Features and benefits  
Fast switching  
Isolated plastic package  
Low leakage current  
Low reverse recovery current  
Low thermal resistance  
Reduces switching losses in associated MOSFET  
3. Applications  
Continuous Current Mode (CCM) Power Factor Correction (PFC)  
Half-bridge/full-bridge switched-mode power supplies  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRRM  
repetitive peak reverse  
voltage  
-
-
600  
V
IF(AV)  
average forward  
current  
δ = 0.5 ; Th ≤ 75 °C; square-wave  
pulse; Fig. 1; Fig. 2; Fig. 3  
-
-
8
A
Static characteristics  
VF  
forward voltage  
IF = 8 A; Tj = 125 °C; Fig. 6  
-
-
1.5  
12  
1.9  
18  
V
Dynamic characteristics  
trr  
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;  
Tj = 25 °C; Fig. 7  
ns  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

与BYC8X-600P,127相关器件

型号 品牌 获取价格 描述 数据表
BYD11 NXP

获取价格

Controlled avalanche rectifiers
BYD1100 NXP

获取价格

Hyper fast soft-recovery rectifier
BYD1100,115 NXP

获取价格

DIODE 0.85 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
BYD1100A EIC

获取价格

Rectifier Diode,
BYD11D NXP

获取价格

Controlled avalanche rectifiers
BYD11D113 NXP

获取价格

DIODE 0.37 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
BYD11D133 NXP

获取价格

DIODE 0.37 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
BYD11D143 NXP

获取价格

DIODE 0.37 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
BYD11DT/R PHILIPS

获取价格

DIODE 0.5 A, SILICON, SIGNAL DIODE, Signal Diode
BYD11G NXP

获取价格

Controlled avalanche rectifiers