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BY550-1000(G) PDF预览

BY550-1000(G)

更新时间: 2024-11-08 13:06:03
品牌 Logo 应用领域
鲁光 - LGE 二极管IOT
页数 文件大小 规格书
2页 163K
描述
暂无描述

BY550-1000(G) 技术参数

Case Style:DO-27IF(A):5.0
Maximum recurrent peak reverse voltage:1000Peak forward surge current:300
Maximum instantaneous forward voltage:1.1@IVA(A):5.0
Maximum reverse current:10.0TRR(nS):/
class:Diodes

BY550-1000(G) 数据手册

 浏览型号BY550-1000(G)的Datasheet PDF文件第2页 
BY550-50--BY550-1000  
Plastic Silicon Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 5.0 A  
DO - 27  
Features  
Low cost  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned witn Freon,Alcohol,lsopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Case:JEDEC DO-27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Dimensions in millimeters  
Polarity: Color band denotes cathode  
Weight: 0.041 ounces, 1.15 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
BY  
BY  
BY  
BY  
BY  
BY  
BY  
UNITS  
550-50 550-100  
550-200 550-400 550-600 550-800 550-1000  
V
V
V
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
MaximumDC blocking voltage  
100  
1000  
Maximumaverage forw ard rectified current  
A
5.0  
IF(AV)  
9.5mmlead length,  
@TA=75  
Peak forw ard surge current  
A
IFSM  
8.3ms single half-sine-w ave  
300.0  
superimposed on rated load @T =125  
J
Maximuminstantaneous forw ard voltage  
V
A
1.1  
VF  
IR  
@ 5.0 A  
Maximumreverse current  
@TA=25  
10.0  
100.0  
at rated DC blocking voltage @TA=100  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
80  
CJ  
RθJA  
TJ  
15  
/ W  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance from junction to ambient.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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