Datasheet > BY329XSERIES

BY329XSERIES

更新时间： 2024-11-27 23:38:59

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
6页	53K
描述
Rectifier diodes fast. soft-recovery

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BY329XSERIES 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

fast, soft-recovery

BY329X series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass-passivated double diffused

rectifier diodes in a full pack plastic

envelope featuring low forward

voltage drop, fast reverse recovery

and soft recovery characteristic. The

devices are intended for use in TV

receivers, monitors and switched

mode power supplies.

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

-800 -1000 -1200

BY329X

V_RRM

Repetitive peak reverse

800 1000 1200

voltage

I_F(AV)

I_FSM

Average forward current

Non-repetitive peak

forward current

t_rr

Reverse recovery time

145

PINNING - SOD113

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

anode

case

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-800 -1000 -1200

V_RSM

Non-repetitive peak reverse

800

1000 1200

voltage

V_RRM

V_RWM

Repetitive peak reverse voltage

Crest working reverse voltage

Average forward current¹

800

600

1000 1200

800

1000

I_F(AV)

square wave; δ = 0.5;

_hs≤ 83 ˚C

sinusoidal; a = 1.57;

_hs≤ 90 ˚C

I_F(RMS)

I_FRM

RMS forward current

Repetitive peak forward current t = 25 µs; δ = 0.5;

_hs≤ 83 ˚C

I_FSM

Non-repetitive peak forward

current.

t = 10 ms

t = 8.3 ms

sinusoidal; T_j= 150 ˚C prior

to surge; with reapplied

V_RWM(max)

I²t

T_stg

T_j

I²t for fusing

Storage temperature

Operating junction temperature

t = 10 ms

-40

150

A²s

˚C

1 Neglecting switching and reverse current losses.

May 1995

Rev 1.000

12 3 4 5 6

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