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BY359F-1500S PDF预览

BY359F-1500S

更新时间: 2024-11-27 22:10:31
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
5页 41K
描述
Damper diode fast, high-voltage

BY359F-1500S 技术参数

生命周期:Obsolete包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.75
Is Samacsys:N应用:HIGH VOLTAGE FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2 VJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:66 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:1500 V
最大反向恢复时间:0.35 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

BY359F-1500S 数据手册

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Philips Semiconductors  
Preliminary specification  
Damper diode  
fast, high-voltage  
BY359F-1500, BY359F-1500S  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 1500 V  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• High thermal cycling performance  
• Isolated mounting tab  
VF 1.8 V / 2 V  
k
1
a
2
IF(RMS) = 15.7 A  
IFSM 60 A  
trr 600 ns / 350 ns  
GENERAL DESCRIPTION  
PINNING  
SOD100  
Glass-passivated double diffused  
rectifier diode featuring low forward  
voltage drop, fast reverse recovery  
and soft recovery characteristic.  
The device is intended for use in TV  
receivers and PC monitors.  
PIN  
DESCRIPTION  
cathode  
anode  
isolated  
case  
1
2
tab  
The BY359F series is supplied in  
the conventional leaded SOD100  
package.  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX. UNIT  
VRSM  
Peak non-repetitive reverse  
voltage  
-
1500  
V
VRRM  
VRWM  
IF(peak)  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Peak forward current  
-
-
-
-
-
-
-
-
1500  
1300  
10  
V
V
A
A
A
A
A
A
16-32kHz TV  
BY359F-1500  
31-70kHz monitor  
BY359F-1500S  
7
IF(RMS)  
RMS forward current  
15.7  
60  
60  
66  
IFRM  
Peak repetitive forward current sinusoidal; a = 1.57  
IFSM  
Peak non-repetitive forward  
current  
t = 10 ms  
t = 8.3 ms  
sinusoidal; Tj = 150 ˚C prior to surge;  
with reapplied VRWM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance junction to with heatsink compound  
-
-
-
-
-
55  
4.8  
5.9  
-
K/W  
K/W  
K/W  
heatsink  
without heatsink compound  
Rth j-a  
Thermal resistance junction to in free air.  
ambient  
September 1998  
1
Rev 1.300  

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