BY251GP

更新时间： 2024-11-19 21:55:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	35K
描述
Glass Passivated Junction Plastic Rectifiers

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BY251GP 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.89
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.1 V	最大非重复峰值正向电流：	100 A
元件数量：	1	最高工作温度：	175 °C
最大输出电流：	3 A	最大重复峰值反向电压：	200 V
子类别：	Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

BY251GP 数据手册

BY251GP thru BY255GP

New Product

Vishay Semiconductors

formerly General Semiconductor

Glass Passivated Junction Plastic Rectifiers

Reverse Voltage

200 to 1300V

DO-201AD

Forward Current 3.0A

Features

1.0 (25.4)

Min.

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

0.210 (5.3)

0.190 (4.8)

Dia.

• High temperature metallurgically bonded construction

• Cavity-free glass passivated junction

•

Capable of meeting environmental standards of MIL-S-19500

3.0 Ampere operation at T =55°C with no thermal runaway

0.375 (9.5)

0.285 (7.2)

• Typical I_Rless than 0.1µA

• High temperature soldering guaranteed: 350°C/10 seconds,

0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension

Mechanical Data

Case: JEDEC DO-201AD, molded plastic over glass body

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

1.0 (25.4)

Min.

0.052 (1.32)

0.048 (1.22)

Dia.

Weight: 0.04 oz., 1.12 g

Packaging Codes/Options:

Dimensions in inches and (millimeters)

1/Bulk – 1.5K per container, 15K/box

4/1.4K per 13” reel, 5.6K/box

*Glass-plastic encapsulation technique is covered by

Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306

23/1K per ammo mag., 9K/box

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol BY251GP BY252GP BY253GP BY254GP BY255GP Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

800

560

800

1300

910

Maximum DC blocking voltage

1300

Maximum average forward rectified current

10mm lead length at T_A= 55°C

I_F(AV)

I_FSM

3.0

100

Peak forward surge current 10ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum full load reverse current, full cycle average

10mm lead length at T_A= 55°C

I_R(AV)

µA

R_ΘJA

R_ΘJL

Typical thermal resistance⁽¹⁾

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

–65 to +175

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Maximum instantaneous forward voltage at 3.0A

V_F

1.1

5.0

Maximum reverse current

at rated DC blocking voltage T_A= 25°C

I_R

µA

Typical reverse recovery time

I_F= 0.5A, I_R= 1.0V, I_rr= 0.25A

t_rr

3.0

µs

Typical junction capacitance at 4.0V, 1MHz

C_J

Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted

Document Number 88541

17-Dec-02

www.vishay.com

中文翻译

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与BY251GP相关器件

型号	品牌	获取价格	描述	数据表
BY251GP/1	VISHAY	获取价格	Rectifier Diode, 1 Element, 3A, 200V V(RRM)
BY251GP/100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY251GP/100-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY251GP/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 3A, 200V V(RRM)
BY251GP/4	VISHAY	获取价格	Rectifier Diode, 1 Element, 3A, 200V V(RRM)
BY251GP/4E	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY251GP/4E-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY251GP/4F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY251GP/4F-E3	VISHAY	获取价格	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY251GP/4G	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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