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BY251GP/23 PDF预览

BY251GP/23

更新时间： 2024-01-29 06:27:14
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 31K
描述
Rectifier Diode, 1 Element, 3A, 200V V(RRM)

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BY251GP/23 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.89
配置：SINGLE二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.1 V最大非重复峰值正向电流：100 A
元件数量：1最高工作温度：175 °C
最大输出电流：3 A最大重复峰值反向电压：200 V
子类别：Rectifier Diodes表面贴装：NO
Base Number Matches：1

BY251GP/23 数据手册

 浏览型号BY251GP/23的Datasheet PDF文件第2页 
BY251GP thru BY255GP  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Junction Plastic Rectifiers  
Reverse Voltage  
200 to 1300V  
DO-201AD  
Forward Current 3.0A  
Features  
1.0 (25.4)  
Min.  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
0.210 (5.3)  
0.190 (4.8)  
Dia.  
• High temperature metallurgically bonded construction  
• Cavity-free glass passivated junction  
•
•
Capable of meeting environmental standards of MIL-S-19500  
3.0 Ampere operation at T =55°C with no thermal runaway  
®
A
0.375 (9.5)  
0.285 (7.2)  
• Typical IR less than 0.1µA  
• High temperature soldering guaranteed: 350°C/10 seconds,  
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension  
Mechanical Data  
Case: JEDEC DO-201AD, molded plastic over glass body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
1.0 (25.4)  
Min.  
0.052 (1.32)  
0.048 (1.22)  
Dia.  
Weight: 0.04 oz., 1.12 g  
Packaging Codes/Options:  
Dimensions in inches and (millimeters)  
1/Bulk – 1.5K per container, 15K/box  
4/1.4K per 13” reel, 5.6K/box  
*Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306  
23/1K per ammo mag., 9K/box  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol BY251GP BY252GP BY253GP BY254GP BY255GP Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1300  
910  
V
V
V
Maximum DC blocking voltage  
1300  
Maximum average forward rectified current  
10mm lead length at TA = 55°C  
IF(AV)  
IFSM  
3.0  
100  
100  
A
A
Peak forward surge current 10ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
Maximum full load reverse current, full cycle average  
10mm lead length at TA = 55°C  
IR(AV)  
µA  
RΘJA  
RΘJL  
20  
10  
Typical thermal resistance(1)  
°C/W  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
–65 to +175  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Maximum instantaneous forward voltage at 3.0A  
VF  
1.1  
5.0  
V
Maximum reverse current  
at rated DC blocking voltage TA = 25°C  
IR  
µA  
Typical reverse recovery time  
IF = 0.5A, IR = 1.0V, Irr = 0.25A  
trr  
3.0  
40  
µs  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
pF  
Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted  
Document Number 88541  
17-Dec-02  
www.vishay.com  
1
12

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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