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BY251GP/100-E3 PDF预览

BY251GP/100-E3

更新时间： 2024-11-21 03:28:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 290K
描述
DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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BY251GP/100-E3 数据手册

 浏览型号BY251GP/100-E3的Datasheet PDF文件第2页浏览型号BY251GP/100-E3的Datasheet PDF文件第3页浏览型号BY251GP/100-E3的Datasheet PDF文件第4页 
BY251GP thru BY255GP  
Vishay General Semiconductor  
Glass Passivated Junction Plastic Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
200 V to 1300 V  
100 A  
5.0 µA  
*
d
VF  
1.1 V  
e
t
n
e
t
Tj max.  
175 °C  
a
P
DO-201AD  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly by  
Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-201AD, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current, I less than 0.1 µA  
R
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
for both consuer and automotive applications  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol BY251GP BY252GP BY253GP BY254GP BY255GP Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
3.0  
800  
560  
800  
1300  
910  
V
V
V
A
Maximum RMS voltage  
Maximum DC blocking voltage  
1300  
Maximum average forward rectified current 10 mm lead  
length at TA = 55 °C  
IF(AV)  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
100  
A
Maximum full load reverse current, full cycle average 10 mm  
lead length at TA = 55 °C  
IR(AV)  
µA  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88541  
14-Oct-05  
www.vishay.com  
1
1234

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 		DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
BY251GP/4H VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
BY251GP/4H-E3 VISHAY

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 		DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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