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BUX85BA PDF预览

BUX85BA

更新时间: 2024-09-25 21:09:11
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
4页 95K
描述
2A, 450V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BUX85BA 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:450 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

BUX85BA 数据手册

 浏览型号BUX85BA的Datasheet PDF文件第2页浏览型号BUX85BA的Datasheet PDF文件第3页浏览型号BUX85BA的Datasheet PDF文件第4页 
BUX85G  
SWITCHMODE NPN Silicon  
Power Transistors  
The BUX85G is designed for high voltage, high speed power  
switching applications like converters, inverters, switching regulators,  
motor control systems.  
http://onsemi.com  
Features  
These Devices are PbFree and are RoHS Compliant*  
2.0 AMPERES  
POWER TRANSISTOR  
NPN SILICON  
MAXIMUM RATINGS  
450 VOLTS, 50 WATTS  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
450  
Vdc  
CEO(sus)  
COLLECTOR  
2,4  
CollectorEmitter Voltage  
V
CES  
V
EBO  
1000  
5
Vdc  
Vdc  
Adc  
Adc  
Adc  
Adc  
Adc  
EmitterBase Voltage  
1
Collector Current Continuous  
Collector Current Peak (Note 1)  
I
C
2
BASE  
I
3.0  
0.75  
1.0  
1
CM  
3
Base Current  
Base Current  
Continuous  
I
B
EMITTER  
Peak (Note 1)  
I
I
BM  
BM  
Reverse Base Current Peak  
4
Total Device Dissipation @ T = 25_C  
P
D
50  
400  
W
W/_C  
C
Derate above 25°C  
TO220AB  
CASE 221A09  
STYLE 1  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
2.5  
Unit  
_C/W  
_C/W  
_C  
1
2
3
Thermal Resistance, JunctiontoCase  
Thermal Resistance, JunctiontoAmbient  
R
q
JC  
JA  
L
R
62.5  
275  
q
MARKING DIAGRAM  
Maximum Lead Temperature for Soldering  
Purposes 1/8from Case for 5 Seconds  
T
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle x 10%.  
BUX85G  
AY WW  
BUX85 = Device Code  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
BUX85G  
TO220  
(PbFree)  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 Rev. 15  
BUX85/D  
 

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