Datasheet > BUT12ATU

BUT12ATU

更新时间： 2025-09-16 19:01:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
3页	29K
描述
元器件封装:TO-220-3;

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中文翻译

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数据手册

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BUT12ATU 数据手册

BUT12/12A

High Voltage Power Switching Applications

TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current (DC)

CBO

: BUT12

: BUT12A

850

1000

CEO

: BUT12

: BUT12A

400

450

*Collector Current (Pulse)

Base Current

Collector Dissipation (T =25°C)

100

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 175

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Turn On Time

Test Condition

Min.

400

Typ.

Max. Units

(sus)

= 100mA, L = 25mH

CEO

CES

= V

, V = 0

1.5

CES

= 9V, I = 0

EBO

(sat)

= 6A, I = 1.2A

(sat)

= 6A, I = 1.2A

= 250V, I = 6A

µs

= - I = 1.2A

Storage Time

STG

R = 41.6Ω

Fall Time

0.8

* Pulsed Test: PW = 300µs, duty cycle = 1.5%

Rev. A1, August 2001

12 3

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