Datasheet
BU99022NUX-3
●Absolute maximum rating (Ta=25℃)
●Memory cell characteristics (Ta=25℃, Vcc=1.7~5.5V)
Parameter
symbol
Limits
Unit
V
Parameter
Limits
Typ.
Unit
Impressed voltage
Permissible
VCC
-0.3~+6.5
Min.
1,000,000
40
Max
-
300 *1
mW
Write/Erase cycle *1
Data retention *1
cycles
Years
Pd
-
dissipation
Storage temperature range
ction temperature range
Terminal voltage
Tstg
Topr
‐
-65~+150
-40~+85
-0.3~Vcc+1.0*2
150
℃
℃
V
-
-
*
1
Not 100% TESTED
●Recommended operating condition
Junction Temperature *3
Tjmax
℃
Parameter
Power source voltage
Input voltage
Symbol
Vcc
Limits
1.7~5.5
0~Vcc
Unit
*1 When using at Ta=25℃ or higher, 3.0mW to be reduced per 1℃.
*2 The Max value of Terminal Voltage is not over 6.5V. When the pulse width is
50ns or less, the Min value of Terminal Voltage is not under -0.8V.
*3 Junction temperature at the storage condition.
V
VIN
●DC operating characteristics
(
Unless otherwise specified, Ta=-40~+85℃、VCC=1.7~5.5V)
Specification
Typ.
Parameter
Symbol
Unit
Test Condition
Min.
Max.
“H”input
voltage1
VIH1
VIL1
0.7Vcc
-
-
Vcc+1.0
0.3Vcc
V
V
“L”input
voltage1
-0.3*1
“L”output
voltage1
I
OL=3.0mA, 2.5V≦Vcc≦5.5V
VOL1
-
-
0.4
V
(SDA1,SDA2)
“L”output
voltage2
IOL=0.7mA, 1.7V≦Vcc<2.5V
VOL2
ILI
-
-
-
-
0.2
1
V
(SDA1,SDA2)
Input leak
current
-1
-1
μA
μA
VIN=0~Vcc
Output leak
current
ILO
1
VOUT=0~Vcc (SDA1,SDA2)
Vcc1=5.5V,fSCL=400kHz, tWR=5ms,
Bytewrite Pagewrite
ICCw1
-
-
2.0
mA
mA
Vcc2=5.5V,fSCL=400kHz, tWR=5ms,
Bytewrite Pagewrite
ICCw2
ICCr1
ICCr2
-
-
-
-
-
-
2.0
0.5
0.5
Operating
Current
Vcc1=5.5V,fSCL=400kHz
Random read, current read, sequential read
Vcc2=5.5V,fSCL=400kHz
Random read, current read, sequential read
ISB1
-
-
-
-
2.0
2.0
Vcc1=5.5V, SDA1・SCL1=Vcc
Standby
current
μA
Vcc2=5.5V, SDA2・SCL2=Vcc
WP2=GND
ISB2
○This product is not designed for protection against radio active rays.
*1 When the pulse width is 50ns or less, it is -0.8V.
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TSZ02201-0R2R0G100010-1-2
2011.12.19 Rev.001
2/23
TSZ22111・14・001