Datasheet > BU99901GUZ-W_12

BU99901GUZ-W_12

更新时间： 2022-05-02 12:03:38

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
26页	711K
描述
Serial EEPROM Series Standard EEPROM WLCSP EEPROM

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BU99901GUZ-W_12 数据手册

Datasheet

Serial EEPROM Series Standard EEPROM

WLCSP EEPROM

BU99901GUZ-W (32Kbit)

●General Description

BU99901GUZ-W series is a serial EEPROM of I²C BUS interface method.

●Features

Completely conforming to the world standard I²C BUS.

All controls available by 2 ports of serial clock (SCL) and serial data (SDA)

Other devices than EEPROM can be connected to the same port, saving microcontroller port.

1.7V to 3.6V single power source action most suitable for battery use.

FAST MODE :400kHz at 1.7V to 3.6V

Page write mode useful for initial value write at factory shipment.

Auto erase and auto end function at data rewrite.

Low current consumption

At write operation (3.3V)

At read operation (3.6V)

At standby operation (3.6V)

: 0.6mA (Typ.)

: 0.1µA (Typ.)

Write mistake prevention function

Write (write protect) function added

Write mistake prevention function at low voltage

Compact package

W(Typ.) x D(Typ.) x H(Max.)

: 1.76mm x 1.05mm x 0.35mm

Data rewrite up to 100,000 times

Data kept for 40 years

Noise filter built in SCL / SDA terminal

Shipment data all address FFh

●Page write

Product number

Number of pages

BU99901GUZ-W

32Byte

●Absolute Maximum Ratings (Ta=25℃)

Remarks

Parameter

symbol

Ratings

Unit

Impressed voltage

V_CC

-0.3 to +6.5

When using at Ta=25℃ or higher 2.2mW to be reduced per 1℃.

Permissible dissipation

Storage temperature range

Action temperature range

Terminal voltage

220

℃

Tstg

Topr

－

-65 to +125

-40 to +85

-0.3 to Vcc+1.0 ^*1

℃

The Max value of Terminal Voltage is not over 6.5V.

●Memory cell characteristics (Ta=25℃, Vcc=1.7V to 3.6V)

Limits

Typ.

Parameter

Unit

Min.

Max.

Number of data rewrite times ^*1

Data hold years ^*1

100,000

－

Times

Years

－

*1 Not 100% TESTED

●Recommended Operating Ratings

Parameter

Symbol

Rating

Unit

Write(Ta=-40℃ to 85℃)

Write(Ta=-40℃ to 70℃)

Read(Ta=-40℃ to 85℃)

2.7 to 3.3

1.8 to 3.3

1.7 to 3.6

0 to Vcc

Supply Voltage

Input Voltage

Vcc

V_IN

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

www.rohm.com

TSZ02201-0R2R0G100280-1-2

4.SEP.2012 Rev.001

1/23

TSZ22111･14･001

12 3 4 5 6 7...26

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