BU2515DX

更新时间： 2024-11-24 22:39:43

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	73K
描述
Silicon Diffused Power Transistor

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BU2515DX 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2515DX

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic

envelope intended for use in horizontal deflection circuits of pc monitors.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Diode forward voltage

P_tot

V_CEsat

I_Csat

V_F

T_hs≤ 25 ˚C

I_C= 4.5 A; I_B= 0.9 A

f = 56 kHz

5.0

4.5

I_F= 4.5 A

2.2

0.4

t_f

Fall time

I_Csat= 4.5 A; f = 56 kHz

0.2

µs

PINNING - SOT399

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

Rbe

case isolated

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

-I_B(AV)

-I_BM

P_tot

T_stg

T_j

Base current peak value

Reverse base current

7.5

125

average over any 20 ms period

Reverse base current peak value ¹

Total power dissipation

Storage temperature

T_hs≤ 25 ˚C

150

˚C

-55

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

with heatsink compound

in free air

2.8

K/W

1 Turn-off current.

September 1997

Rev 1.300

12 3 4 5 6 7

中文翻译

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