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BTS6306U PDF预览

BTS6306U

更新时间: 2024-04-09 19:01:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 328K
描述
5G Massive MIMO Pre-driver

BTS6306U 数据手册

 浏览型号BTS6306U的Datasheet PDF文件第3页浏览型号BTS6306U的Datasheet PDF文件第4页浏览型号BTS6306U的Datasheet PDF文件第5页浏览型号BTS6306U的Datasheet PDF文件第7页浏览型号BTS6306U的Datasheet PDF文件第8页浏览型号BTS6306U的Datasheet PDF文件第9页 
NXP Semiconductors  
BTS6306U  
High linearity pre-driver amplifier with differential input 3.3 GHz - 4.2 GHz  
Table 9.ꢀCharacteristics...continued  
VCC = 5 V; Tamb = 25 °C; input 100 Ω, and output 50 Ω; unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
ts(pon)  
ts(poff)  
K
power-on  
settling time  
VEN from LOW to HIGH to gain settled within 0.1 dB of final  
value and phase settled to within 1 degree of final value  
-
0.4 0.6 µs  
power-off  
settling time  
VEN from HIGH to LOW to gain settled to be < 5 % of gain in  
ON state  
-
0.05 0.1 µs  
Rollett stability 1 MHz to 15 GHz  
factor  
1.8  
-
-
-
-
ACLR  
adjacent  
channel  
leakage ratio  
CP-OFDM with 20 MHz channel BW, QPSK modulation,  
and 60 kHz SCS, fully allocated, Po = 15 dBm  
-45 dBc  
[1] Connector and Printed-Circuit Board (PCB) losses have been de-embedded, 3 dB gain compression  
[2] Connector and Printed-Circuit Board (PCB) losses have been de-embedded.  
BTS6306U  
All information provided in this document is subject to legal disclaimers.  
© 2023 NXP B.V. All rights reserved.  
Product data sheet  
Rev. 8.0 — 3 October 2023  
6 / 16  
 
 

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