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BTS6306U PDF预览

BTS6306U

更新时间: 2024-04-09 19:01:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 328K
描述
5G Massive MIMO Pre-driver

BTS6306U 数据手册

 浏览型号BTS6306U的Datasheet PDF文件第1页浏览型号BTS6306U的Datasheet PDF文件第2页浏览型号BTS6306U的Datasheet PDF文件第4页浏览型号BTS6306U的Datasheet PDF文件第5页浏览型号BTS6306U的Datasheet PDF文件第6页浏览型号BTS6306U的Datasheet PDF文件第7页 
NXP Semiconductors  
BTS6306U  
High linearity pre-driver amplifier with differential input 3.3 GHz - 4.2 GHz  
8 Pinning information  
8.1 Pin diagram  
terminal 1  
index area  
1
2
3
4
12  
11  
10  
9
GND  
RFin_p  
RFin_n  
GND  
GND  
n.c.  
17  
RFout  
GND  
GND  
aaa-042803  
Transparent top view  
Figure 2.ꢀPin configuration  
8.2 Pin description  
Table 4.ꢀPin description  
Pin  
Symbol  
GND  
Description  
PCB ground  
RF input  
1, 4, 6, 9,12, and 17  
2
RFin_p  
RFin_n  
VCC1  
3
RF input  
5
supply voltage  
not connected  
RF output  
[1]  
7, 8, 11, 14, and 15  
n.c.  
10  
13  
16  
RFout  
VCC2  
supply voltage  
VEN  
voltage enable; LOW = OFF state; HIGH = ON state  
[1] n.c. means that pin is not connected inside package, and may be left floating in application  
9 Functional description  
Table 5.ꢀShutdown control  
[1]  
Ven  
voltage applied at pin Ven  
0 < V (Ven) < VIL(max)  
State  
OFF  
ON  
Condition  
LOW  
HIGH  
bias active, amplifier not active  
bias active, amplifier active  
VIH(min) < V (Ven) < VI(max)  
[1] VEN can only be made HIGH, after supply voltage has been applied to pin VCC1  
BTS6306U  
All information provided in this document is subject to legal disclaimers.  
© 2023 NXP B.V. All rights reserved.  
Product data sheet  
Rev. 8.0 — 3 October 2023  
3 / 16  
 
 
 
 
 

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