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BTS6510B PDF预览

BTS6510B

更新时间: 2024-11-21 12:52:03
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关
页数 文件大小 规格书
15页 264K
描述
Smart Highside High Current Power Switch

BTS6510B 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:TO-263, SMSIP7H,.55,50TB针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.8
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数:1接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G7长度:9.9 mm
功能数量:1端子数量:7
输出电流流向:SOURCE最大输出电流:20 A
标称输出峰值电流:130 A封装主体材料:PLASTIC/EPOXY
封装代码:TO-263封装等效代码:SMSIP7H,.55,50TB
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
电源:5/34 V认证状态:Not Qualified
子类别:Peripheral Drivers最大供电电压:34 V
最小供电电压:5 V标称供电电压:12 V
表面贴装:YES技术:MOS
端子形式:GULL WING端子节距:1.27 mm
端子位置:SINGLE断开时间:200 µs
接通时间:470 µs宽度:9.2 mm
Base Number Matches:1

BTS6510B 数据手册

 浏览型号BTS6510B的Datasheet PDF文件第2页浏览型号BTS6510B的Datasheet PDF文件第3页浏览型号BTS6510B的Datasheet PDF文件第4页浏览型号BTS6510B的Datasheet PDF文件第5页浏览型号BTS6510B的Datasheet PDF文件第6页浏览型号BTS6510B的Datasheet PDF文件第7页 
Data Sheet BTS6510  
Smart Highside High Current Power Switch  
Product Summary  
Operating voltage  
On-state resistance  
Noinal current  
Reversave  
Reverse battery protection by self turn on of  
power MOSFET  
V
5.0...34  
V
bb(on)  
R
6.0  
17  
70  
mΩ  
A
A
ON  
Features  
I
I
L(nom)  
L(ISO)  
L(SC)  
Overload protection  
Current limitation  
Short circuit protection  
Overtemperature protection  
Overvoltage protection (including load dump)  
Clamp of negative voltage at output  
Load current (ISO)  
Short circuit current limitation I  
Current sense ratio  
130  
14 000  
A
I : I  
L
IS  
1
)
Fast deenergizing of inductive loads  
TO 220-7  
Low ohmic inverse current operation  
Diagnostic feedback with load current sense  
Open load detection via current sense  
2
)
Loss of V protection  
bb  
Electrostatic discharge (ESD) protection  
Application  
7
Power switch with current sense diagnostic  
feedback for 12V and 24V DC grounded loads  
Most suitable for loads with high inrush current  
like lamps and motors; all types of resistive and inductive loads  
Replaces electromechanical relays, fuses and discrete circuits  
1
S M D  
General Description  
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.  
4 & Tab  
+ V  
bb  
R
bb  
Voltage  
source  
Current  
limit  
Overvoltage  
protection  
Gate  
protection  
1,2,6,7  
OUT  
Limit for  
Voltage  
sensor  
Charge pump  
Level shifter  
Rectifier  
unclamped  
ind. loads  
IL  
Current  
Sense  
Output  
Voltage  
detection  
3
Load  
IN  
Logic  
ESD  
IIN  
Temperature  
sensor  
IIS  
PROFET  
IS  
Load GND  
5
VIN  
R
VIS  
IS  
Logic GND  
1
2
)
)
With additional external diode.  
Additional external diode required for energized inductive loads (see page 8).  
Infineon Technologies AG  
Page 1of 15  
2003-Oct-01  

BTS6510B 替代型号

型号 品牌 替代类型 描述 数据表
BTS50055-1TMC INFINEON

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