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BTS660P

更新时间: 2024-11-20 22:39:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电源开关
页数 文件大小 规格书
16页 306K
描述
Smart Highside High Current Power Switch

BTS660P 数据手册

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®
PROFET Data Sheet BTS660P  
Smart Highside High Current Power Switch  
Product Summary  
Overvoltage protection  
Output clamp  
Operating voltage  
On-state resistance  
Load current (ISO)  
Reversave  
Reverse battery protection by self turn on of  
power MOSFET  
Vbb(AZ)  
VON(CL)  
70  
V
V
V
62  
5.0...58  
Features  
V
bb(on)  
Overload protection  
Current limitation  
Short circuit protection  
Over temperature protection  
Over voltage protection (including load dump)  
Clamp of negative voltage at output  
Fast deenergizing of inductive loads  
Low ohmic inverse current operation  
Diagnostic feedback with load current sense  
Open load detection via current sense  
R
ON  
9
44  
mΩ  
A
I
L(ISO)  
L(SC)  
Short circuit current limitation I  
Current sense ratio  
90  
13 000  
A
I : I  
L
IS  
1
)
TO 220-7SMD  
2
Loss of Vbb protection )  
Electrostatic discharge (ESD) protection  
7
7
Application  
Power switch with current sense diagnostic  
1
1
SMD  
Standard  
feedback for up to 48V DC grounded loads  
Most suitable for loads with high inrush current  
like lamps and motors; all types of resistive and  
inductive loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load  
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.  
4 & Tab  
+ V  
bb  
R
bb  
Voltage  
source  
Current  
limit  
Gate  
protection  
Overvoltage  
protection  
1,2,6,7  
OUT  
Limit for  
Voltage  
sensor  
Charge pump  
Level shifter  
Rectifier  
unclamped  
ind. loads  
IL  
Current  
Sense  
Output  
Voltage  
detection  
3
Load  
IN  
Logic  
ESD  
IIN  
Temperature  
sensor  
IIS  
PROFET  
IS  
Load GND  
5
VIN  
R
VIS  
IS  
Logic GND  
1
2
)
)
With additional external diode.  
Additional external diode required for energized inductive loads (see page 9).  
Infineon Technologies AG  
Page 1  
2003-Oct-01  

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