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BTS432I2E3122A PDF预览

BTS432I2E3122A

更新时间: 2024-11-18 14:48:11
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动接口集成电路
页数 文件大小 规格书
15页 162K
描述
Buffer/Inverter Based Peripheral Driver, 1 Driver, 11A, PSSO4, TO-220AB, 5 PIN

BTS432I2E3122A 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 5 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.25Is Samacsys:N
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G4
JESD-609代码:e0长度:9.9 mm
功能数量:1端子数量:4
输出电流流向:SOURCE标称输出峰值电流:11 A
封装主体材料:PLASTIC/EPOXY封装代码:TO-263
封装等效代码:SMSIP5H,.6,67TB封装形状:RECTANGULAR
封装形式:SMALL OUTLINE电源:4.5/42 V
认证状态:Not Qualified子类别:Peripheral Drivers
最大供电电压:42 V最小供电电压:4.5 V
标称供电电压:12 V表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.7 mm端子位置:SINGLE
断开时间:80 µs接通时间:300 µs
宽度:9.2 mmBase Number Matches:1

BTS432I2E3122A 数据手册

 浏览型号BTS432I2E3122A的Datasheet PDF文件第2页浏览型号BTS432I2E3122A的Datasheet PDF文件第3页浏览型号BTS432I2E3122A的Datasheet PDF文件第4页浏览型号BTS432I2E3122A的Datasheet PDF文件第5页浏览型号BTS432I2E3122A的Datasheet PDF文件第6页浏览型号BTS432I2E3122A的Datasheet PDF文件第7页 
®
PROFET BTS 432 I2  
Smart Highside Power Switch  
Features  
Product Summary  
1
·
·
·
·
·
·
·
·
·
·
·
·
)
Load dump and reverse battery protection  
Clamp of negative voltage at output  
Short-circuit protection  
Current limitation  
Thermal shutdown  
Diagnostic feedback  
Open load detection in OFF-state  
CMOS compatible input  
Electrostatic discharge (ESD) protection  
Loss of ground and loss of V protection  
V
80  
58  
V
V
Load dump  
V -VOUT Avalanche Clamp  
bb  
V
V
R
4.5 ... 42  
-32  
V
V
bb (operation)  
bb (reverse)  
ON  
38  
42  
mW  
A
I
L(SCp)  
I
33  
A
L(SCr)  
I
11  
A
L(ISO)  
2)  
bb  
Overvoltage protection  
Undervoltage and overvoltage shutdown with auto-restart and  
hysteresis  
5
Application  
5
·
1
mC compatible power switch with diagnostic feedback  
for 12 V and 24 V DC grounded loads  
Standard  
SMD  
·
·
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
â
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection  
functions.  
R
bb  
+ V  
bb  
3
Voltage  
source  
V
Overvoltage  
protection  
Current  
limit  
Gate  
protection  
Logic  
OUT  
Charge pump  
Level shifter  
Limit for  
unclamped  
ind. loads  
Voltage  
sensor  
5
Temperature  
sensor  
Rectifier  
IN  
2
Open load  
detection  
Load  
Logic  
ESD  
4
ST  
Short circuit  
detection  
â
PROFET  
GND  
1
Load GND  
Signal GND  
1)  
2)  
No external components required, reverse load current limited by connected load.  
Additional external diode required for charged inductive loads  
Infineon Technologies AG  
Page 1 of 15  
1999-02-19  

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