Datasheet > BTS432E2-E3062A

BTS432E2-E3062A

更新时间： 2022-01-19 01:20:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
14页	191K
描述
TRANSISTOR SMD PROFET LESITUNGS MOSFET

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中文翻译

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数据手册

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BTS432E2-E3062A 数据手册

BTS 432 E2

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump and

reverse battery protection , protection against loss of ground

Type

BTS 432D2 432E2 432F2 432I2

Logic version

Overtemperature protection

T >150 °C, latch function^{15 16}

)

T >150 °C, with auto-restart on cooling

Short-circuit to GND protection

15)

switches off when V >8.3 V typ.

(when first turned on after approx. 200 µs)

Open load detection

in OFF-state with sensing current 30 µA typ.

in ON-state with sensing voltage drop across

power transistor

Undervoltage shutdown with auto restart

Overvoltage shutdown with auto restart

Status feedback for

overtemperature

short circuit to GND

17)

short to V

open load

undervoltage

overvoltage

Status output type

CMOS

Open drain

Output negative voltage transient limit

(fast inductive load switch off)

to V - V

bb ON(CL)

Load current limit

high level (can handle loads with high inrush currents)

medium level

low level (better protection of application)

15)

Latch except when V -V

< V

after shutdown. In most cases V

= 0 V after shutdown (V

≠

OUT

ON(SC)

OUT

0 V only if forced externally). So the device remains latched unlessV < V

(see page 4). No latch

ON(SC)

between turn on and t

With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage

Low resistance short V to output may be detected by no-load-detection

d(SC)

16)

17)

Semiconductor Group

Page 9

1999-Mar.-22

1...6 7 8910 11 12...14

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