Datasheet > BTS43212E3122A

BTS43212E3122A

更新时间： 2024-11-19 22:48:35

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
15页	167K
描述
Smart Highside Power Switch

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中文翻译

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数据手册

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BTS43212E3122A 数据手册

PROFET BTS 432 I2

Smart Highside Power Switch

Features

Product Summary

)

Load dump and reverse battery protection

Clamp of negative voltage at output

Short-circuit protection

Current limitation

Thermal shutdown

Diagnostic feedback

Open load detection in OFF-state

CMOS compatible input

Electrostatic discharge (ESD) protection

Loss of ground and loss of V protection

Load dump

V -V_OUTAvalanche Clamp

4.5 ... 42

-32

bb (operation)

bb (reverse)

L(SCp)

L(SCr)

L(ISO)

Overvoltage protection

Undervoltage and overvoltage shutdown with auto-restart and

hysteresis

Application

mC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

Standard

SMD

All types of resistive, inductive and capacitve loads

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection

functions.

+ V

Voltage

source

Overvoltage

protection

Current

limit

Gate

protection

Logic

OUT

Charge pump

Level shifter

Limit for

unclamped

ind. loads

Voltage

sensor

Temperature

sensor

Rectifier

Open load

detection

Load

Logic

ESD

Short circuit

detection

PROFET

GND

Load GND

Signal GND

No external components required, reverse load current limited by connected load.

Additional external diode required for charged inductive loads

Infineon Technologies AG

Page 1 of 15

1999-02-19

12 3 4 5 6 7...15

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