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BTS432D2 PDF预览

BTS432D2

更新时间: 2024-11-17 22:48:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关接口集成电路电源开关驱动局域网
页数 文件大小 规格书
13页 147K
描述
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown)

BTS432D2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ZIP, ZIP5,.15,.2,67TB
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.53Samacsys Description:Smart Highside Power Switch
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PZFM-T5JESD-609代码:e0
功能数量:1端子数量:5
输出电流流向:SOURCE标称输出峰值电流:11 A
封装主体材料:PLASTIC/EPOXY封装代码:ZIP
封装等效代码:ZIP5,.15,.2,67TB封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
电源:4.5/42 V认证状态:Not Qualified
子类别:MOSFET Drivers最大供电电压:42 V
最小供电电压:4.5 V标称供电电压:12 V
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:1.7 mm
端子位置:ZIG-ZAG处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:80 µs接通时间:300 µs

BTS432D2 数据手册

 浏览型号BTS432D2的Datasheet PDF文件第2页浏览型号BTS432D2的Datasheet PDF文件第3页浏览型号BTS432D2的Datasheet PDF文件第4页浏览型号BTS432D2的Datasheet PDF文件第5页浏览型号BTS432D2的Datasheet PDF文件第6页浏览型号BTS432D2的Datasheet PDF文件第7页 
®
PROFET BTS 432 D2  
Smart Highside Power Switch  
Features  
Product Summary  
1
)
Load dump and reverse battery protection  
Clamp of negative voltage at output  
Short-circuit protection  
Current limitation  
Thermal shutdown  
Diagnostic feedback  
Open load detection in ON-state  
CMOS compatible input  
Electrostatic discharge (ESD) protection  
Loss of ground and loss of V protection  
V
V
V
V
80  
58  
V
V
Load dump  
V
-
bb  
OUT Avalanche Clamp  
4.5 ... 42  
-32  
V
V
bb (operation)  
bb (reverse)  
R
ON  
38  
44  
m  
A
I
I
I
L(SCp)  
L(SCr)  
L(ISO)  
35  
A
11  
A
2)  
bb  
Overvoltage protection  
Undervoltage and overvoltage shutdown with auto-restart and hysteresis  
5
Application  
µC compatible power switch with diagnostic feedback  
for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection  
functions.  
+ V  
R
bb  
bb  
3
5
Vo lta g e  
so urc e  
V
Ga te  
Ove rvo lta g e  
p ro te c tio n  
Curre nt  
lim it  
p ro te c tio n  
Logic  
OUT  
Lim it fo r  
unc la m p e d  
ind . lo a d s  
Cha rg e p um p  
Le ve l shifte r  
Vo lta g e  
se nso r  
Te m p e ra ture  
se nso r  
Re c tifie r  
IN  
2
Op e n lo a d  
d e te c tio n  
Load  
Lo g ic  
ESD  
4
ST  
Sho rt c irc uit  
d e te c tio n  
PROFET  
GND  
1
Load GND  
Signal GND  
1)  
2)  
No external components required, reverse load current limited by connected load.  
Additional external diode required for charged inductive loads  
Semiconductor Group  
1
04.96  

BTS432D2 替代型号

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