Datasheet > BTS432E2-E3062A

BTS432E2-E3062A

更新时间： 2022-01-19 01:20:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
14页	191K
描述
TRANSISTOR SMD PROFET LESITUNGS MOSFET

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BTS432E2-E3062A 数据手册

PROFET BTS 432 E2

Smart Highside Power Switch

Features

Product Summary

•

)

Load dump and reverse battery protection

Clamp of negative voltage at output

Short-circuit protection

Current limitation

Thermal shutdown

Diagnostic feedback

Open load detection in ON-state

CMOS compatible input

Electrostatic discharge (ESD) protection

Loss of ground and loss of V protection

Load dump

V -V_OUTAvalanche Clamp

4.5 ... 42

-32

bb (operation)

bb (reverse)

mΩ

L(SCp)

L(SCr)

L(ISO)

Overvoltage protection

Undervoltage and overvoltage shutdown with auto-

restart and hysteresis

Application

•

µC compatible power switch with diagnostic feedback

SMD

Straight leads

Standard

for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection

functions.

+ V

Voltage

source

Gate

Overvoltage

protection

Current

limit

protection

V_Logic

OUT

Limit for

unclamped

ind. loads

Charge pump

Level shifter

Voltage

sensor

Temperature

sensor

Rectifier

Open load

detection

Load

Logic

ESD

Short circuit

detection

PROFET

GND

Load GND

Signal GND

No external components required, reverse load current limited by connected load.

Additional external diode required for charged inductive loads

Semiconductor Group

Page 1 of 14

1999-Mar.-22

12 3 4 5 6 7...14

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