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BTS432E2-E3062A PDF预览

BTS432E2-E3062A

更新时间: 2022-01-19 01:20:00
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
14页 191K
描述
TRANSISTOR SMD PROFET LESITUNGS MOSFET

BTS432E2-E3062A 数据手册

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BTS 432 E2  
Parameter and Conditions  
Symbol  
Values  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Protection Functions  
Initial peak short circuit current limit (pin 3 to 5)8),  
IL(SCp)  
( max 400 µs if VON > VON(SC)  
)
Tj =-40°C:  
Tj =25°C:  
Tj =+150°C:  
--  
--  
24  
--  
44  
--  
74  
--  
--  
A
Repetitive short circuit current limit  
IL(SCr)  
Tj = Tjt (see timing diagrams, page 10)  
22  
80  
35  
--  
--  
A
Short circuit shutdown delay after input pos. slope  
VON > VON(SC) Tj =-40..+150°C: td(SC)  
,
400  
µs  
min value valid only, if input "low" time exceeds 30µs  
Output clamp (inductive load switch off)  
at VOUT = Vbb - VON(CL), IL= 30 mA  
VON(CL)  
--  
58  
--  
V
Short circuit shutdown detection voltage  
(pin 3 to 5)  
VON(SC)  
Tjt  
--  
150  
--  
8.3  
--  
--  
--  
V
°C  
K
Thermal overload trip temperature  
Thermal hysteresis  
Inductive load switch-off energy dissipation9),  
Tjt  
10  
--  
--  
EAS  
--  
1.7  
1.3  
1.0  
J
Tj Start = 150 °C, single pulse  
Vbb = 12 V: ELoad12  
Vbb = 24 V: ELoad24  
Reverse battery (pin 3 to 1) 10)  
Integrated resistor in Vbb line  
-Vbb  
--  
--  
--  
32  
--  
V
Rbb  
120  
Diagnostic Characteristics  
Open load detection current  
Tj=-40 °C: IL (OL)  
Tj=25..150°C:  
2
2
--  
--  
900 mA  
750  
(on-condition)  
8)  
Short circuit current limit for max. duration of 400 µs, prior to shutdown (see t  
d(SC)  
page 4)  
9)  
While demagnetizing load inductance, dissipated energy in PROFET isE = VON(CL) * iL(t) dt, approx.  
AS  
VON(CL)  
VON(CL) - Vbb  
2
L
1
E
AS  
= / * L * I * (  
), see diagram page 8  
2
10)  
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.  
Reverse current I of 0.3 A at V = -32 V through the logic heats up the device. Time allowed under  
GND  
bb  
these condition is dependent on the size of the heatsink.Reverse I  
can be reduced by an additional  
GND  
external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page2 and  
circuit page 7).  
Semiconductor Group  
Page 4  
1999-Mar.-22  

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