Datasheet > BTS432E2-E3062A

BTS432E2-E3062A

更新时间： 2022-01-19 01:20:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
14页	191K
描述
TRANSISTOR SMD PROFET LESITUNGS MOSFET

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BTS432E2-E3062A 数据手册

BTS 432 E2

Symbol

GND

Function

Logic ground

Input, activates the power switch in case of logical high signal

Positive power supply voltage,

the tab is shorted to this pin

Diagnostic feedback, low on failure

Output to the load

OUT

(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 3)

V_bb

V_s³⁾

Load dump protection V_LoadDump= U_A+ V_s, U_A= 13.5 V

R_I= 2 Ω, R_L= 1.1 Ω, t_d= 200 ms, IN= low or high

66.5

Load current (Short-circuit current, see page 4)

Operating temperature range

Storage temperature range

I_L

self-limited

-40 ...+150

-55 ...+150

T_j

T_stg

P_tot

°C

Power dissipation (DC)

125

Inductive load switch-off energy dissipation,

single pulse

T=150 °C: E_AS

1.7

2.0

Electrostatic discharge capability (ESD)

(Human Body Model)

V_ESD

Input voltage (DC)

V_IN

I_IN

I_ST

-0.5 ... +6

±5.0

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagrams page 6...

±5.0

Thermal resistance

chip - case: R_thJC

junction - ambient (free air): R_thJA

SMD version, device on pcb⁴⁾:

≤ 1 K/W

≤ 75

≤ tbd

V_Sis setup without DUT connected to the generator per ISO 7637-1 and DIN 40839

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70µm thick) copper area for V

connection. PCB is vertical without blown air.

Semiconductor Group

Page 2

1999-Mar.-22

123 4 5 6 7...14

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