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BTS3142D_06 PDF预览

BTS3142D_06

更新时间: 2024-02-19 06:13:02
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
11页 239K
描述
Smart Low Side Power Switch

BTS3142D_06 数据手册

 浏览型号BTS3142D_06的Datasheet PDF文件第2页浏览型号BTS3142D_06的Datasheet PDF文件第3页浏览型号BTS3142D_06的Datasheet PDF文件第4页浏览型号BTS3142D_06的Datasheet PDF文件第5页浏览型号BTS3142D_06的Datasheet PDF文件第6页浏览型号BTS3142D_06的Datasheet PDF文件第7页 
Smart Low Side Power Switch  
Power HITFET BTS 3142D  
Features  
Product Summary  
Drain source voltage  
On-state resistance  
Nominal load current  
Clamping energy  
V
R
I
42  
28  
V
S Logic Level Input  
DS  
S Input Protection (ESD)  
S Thermal shutdown  
Green product (RoHS compliant)  
S Overload protection  
S Short circuit protection  
S Overvoltage protection  
S Current limitation  
m  
A
DS(on)  
4.6  
3.5  
D(Nom)  
E
J
AS  
P / PG-TO252-3-11  
S Analog driving possible  
Application  
All kinds of resistive, inductive and capacitive loads in switching  
or linear applications  
µC compatible power switch for 12 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded  
protection functions.  
Vbb  
M
Drain  
HITFET  
Pin 2 and 4 (TAB)  
Current  
Limitation  
Overvoltage-  
Protection  
In  
Gate-Driving  
Unit  
Pin 1  
Over-  
temperature  
Protection  
Overload  
Protection  
Short circuit  
Protection  
ESD  
Pin 3  
Source  
Datasheet  
1
Rev. 1.3, 2006-12-22  

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