Datasheet > BTA312X-800E

BTA312X-800E

更新时间： 2024-04-09 19:00:41

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
13页	524K
描述
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers.

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BTA312X-800E 数据手册

WeEn Semiconductors

BTA312X-800E

3Q Hi-Com Triac

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_DRM

repetitive peak oﬀ-state

800

voltage

I_T(RMS)

I_TSM

RMS on-state current

full sine wave; T_h≤ 59 °C;

Fig 1; Fig 2; Fig 3

non-repetitive peak on-

state current

full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

Fig 4; Fig 5

100

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

t_p= 10 ms; SIN

110

I²t

I²t for fusing

A²s

dI_T/dt

rate of rise of on-state

current

I_G= 0.2 A

100

A/μs

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

°C

average gate power

storage temperature

junction temperature

over any 20 ms period

0.5

150

125

stg

-40

T_j

Fig. 1. RMS on-state current as a function of heatsink

temperature; maximum values

f = 50 Hz; T_h= 59 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

BTA312X-800E

All information provided in this document is subject to legal disclaimers.

Product data sheet

27 December 2022

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