Datasheet > BTA312Y-800C,127

BTA312Y-800C,127

更新时间： 2024-01-20 10:08:49

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恩智浦 - NXP		局域网栅三端双向交流开关栅极
页数	文件大小	规格书
13页	212K
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BTA312Y-800C

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BTA312Y-800C,127 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	not_compliant
HTS代码：	8541.30.00.80	Factory Lead Time：	6 weeks
风险等级：	5.55	外壳连接：	ISOLATED
配置：	SINGLE	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
最大均方根通态电流：	12 A	参考标准：	IEC-60134
断态重复峰值电压：	800 V	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：	1

BTA312Y-800C,127 数据手册

BTA312Y-800C

3Q Hi-Com Triac

9 June 2014

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB)

internally insulated plastic package intended for use in circuits where high static and

dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS

current at the maximum rated junction temperature without the aid of a snubber. This

device has an internally isolated mounting base.

2. Features and benefits

3Q technology for improved noise immunity

High commutation capability with maximum false trigger immunity

High immunity to false turn-on by dV/dt

Isolated mounting base with 2500 V (RMS) isolation

Less sensitive gate for high noise immunity

•

Planar passivated for voltage ruggedness and reliability

Triggering in three quadrants only

3. Applications

Electronic thermostats (heating and cooling)

Motor controls

Rectifier-fed DC inductive loads e.g. DC motors and solenoids

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

repetitive peak off-

state voltage

800

I_TSM

non-repetitive peak on- full sine wave; T_j(init)= 25 °C;

100

state current

t_p= 20 ms; Fig. 4; Fig. 5

T_j

junction temperature

RMS on-state current

125

°C

I_T(RMS)

full sine wave; T_mb≤ 84 °C; Fig. 1;

Fig. 2; Fig. 3

Static characteristics

I_GTgate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

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