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BTA316-600ET PDF预览

BTA316-600ET

更新时间: 2024-11-20 17:00:47
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
14页 235K
描述
Planar passivated high commutation three quadrant triac in a SOT78 plastic package. The "series ET

BTA316-600ET 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.56Is Samacsys:N
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:16 A参考标准:IEC-60134
断态重复峰值电压:600 V表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

BTA316-600ET 数据手册

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BTA316-600ET  
3Q Hi-Com Triac  
12 September 2018  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a SOT78 plastic package. The  
"series ET" triac balances the requirements of commutation performance and gate sensitivity.  
The "sensitive gate" "series ET" is intended for interfacing with low power drivers including  
microcontrollers where "high junction operating temperature" capability is required.  
2. Features and benefits  
3Q technology for improved noise immunity  
Direct interfacing with low power drivers and microcontrollers  
Good immunity to false turn-on by dV/dt  
High commutation capability with sensitive gate  
High junction operating temperature capability  
High voltage capability  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
3. Applications  
Applications subject to high temperature  
Electronic thermostats (heating and cooling)  
High power motor controls e.g. washing machines and vacuum cleaners  
Refrigeration and air-conditioner compressor controls  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
600  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 126 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
16  
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
140  
150  
150  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
2
-
10  
mA  
 
 
 
 

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