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BTA316-600ET PDF预览

BTA316-600ET

更新时间: 2024-01-19 18:44:30
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
13页 202K
描述
16 A three-quadrant high commutation triac

BTA316-600ET 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.56
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大均方根通态电流:16 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BTA316-600ET 数据手册

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BTA316-600ET  
16 A three-quadrant high commutation triac  
Rev. 01 — 30 March 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Planar passivated, new generation, high commutation, high operating junction  
temperature, three-quadrant triac in a SOT78 plastic package.  
1.2 Features and benefits  
„ Hi-Com triac with maximum false  
„ Sensitive gate for direct triggering from  
trigger immunity  
microcontrollers and logic ICs  
„ High operating junction temperature  
„ Planar passivated  
„ Triggering in three quadrants only  
1.3 Applications  
„ Applications subject to high  
„ High power motor controls in washing  
temperature  
machines and vacuum cleaners  
„ Electronic thermostats, heating and  
„ Refrigeration and air-conditioner  
cooking controls  
compressor controls  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
VDRM  
ITSM  
repetitive peak  
off-state voltage  
-
-
600  
V
non-repetitive peak  
on-state current  
full sine wave; Tj(init) = 25 °C;  
tp = 20 ms; see Figure 4 and 5  
-
-
140  
A
Tj  
junction temperature  
-
-
-
-
150  
16  
°C  
A
IT(RMS)  
RMS on-state  
current  
full sine wave; Tmb 126 °C;  
see Figure 3, 1 and 2  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; see Figure 7  
-
-
-
-
-
-
10  
10  
10  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; see Figure 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; see Figure 7  

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