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BTA312Y-800C PDF预览

BTA312Y-800C

更新时间: 2024-11-20 17:00:51
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
14页 513K
描述
Planar passivated high commutation three quadrant triac in a IITO-220 internally insulated plastic

BTA312Y-800C 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.57
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:12 A参考标准:IEC-60134
断态重复峰值电压:800 V表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

BTA312Y-800C 数据手册

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BTA312Y-800C  
3Q Hi-Com Triac  
Rev.02 - 05 July 2021  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in an IITO220 internally insulated plastic  
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.  
This "series C" triac will commutate the full RMS current at the maximum rated junction temperature  
without the aid of a snubber. This device has an internally isolated mounting base.  
2. Features and benefits  
3Q technology for improved noise immunity  
High commutation capability with maximum false trigger immunity  
High immunity to false turn-on by dV/dt  
Isolated mounting base with 2500 V (RMS) isolation  
Less sensitive gate for high noise immunity  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
3. Applications  
Electronic thermostats (heating and cooling)  
Motor control  
Rectifier-fed DC inductive loads e.g. DC motors and solenoids  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
800  
V
RMS on-state current  
full sine wave; Tmb ≤ 84 °C;  
Fig. 1; Fig. 2; Fig. 3  
-
-
-
-
12  
A
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp =20 ms;  
100  
state current  
Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
-
-
110  
125  
A
Tj  
junction temperature  
°C  
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Max  
Unit  
IGT  
gate trigger current  
VD = 12 V; IT = 100mA; T2+ G+;  
Tj = 25 °C; Fig. 7  
2
2
-
-
35  
35  
mA  
mA  
VD = 12 V; IT = 100mA; T2+ G-;  
Tj = 25 °C; Fig. 7  

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