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BTA216B800E PDF预览

BTA216B800E

更新时间: 2024-11-12 23:35:59
品牌 Logo 应用领域
其他 - ETC 栅极三端双向交流开关
页数 文件大小 规格书
6页 73K
描述
TRIAC|800V V(DRM)|16A I(T)RMS|SOT-404

BTA216B800E 数据手册

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Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA216B series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated guaranteed commutation  
triacs in a plastic envelope suitable for  
surface mounting, intended for use in  
motor control circuits or with other highly  
inductive loads. These devices balance  
the requirements of commutation  
performance and gate sensitivity. The  
"sensitive gate" E series and "logic level"  
D series are intended for interfacing with  
low power drivers, including micro  
controllers.  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BTA216B-  
BTA216B-  
BTA216B-  
600D  
-
600E 800E  
VDRM  
600F  
600  
800F  
800  
V
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
IT(RMS)  
ITSM  
A
A
16  
140  
16  
140  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
mb  
T2  
T1  
2
main terminal 2  
gate  
3
2
mb main terminal 2  
1
3
G
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
6001  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
16  
A
Tmb 99 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
-
-
t = 20 ms  
140  
150  
98  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
-
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
February 2000  
1
Rev 1.000  
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