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BTA216X-600B PDF预览

BTA216X-600B

更新时间: 2024-02-24 08:45:55
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恩智浦 - NXP 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
6页 53K
描述
Three quadrant triacs high commutation

BTA216X-600B 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.72关态电压最小值的临界上升速率:70 V/us
最大直流栅极触发电流:25 mA最大直流栅极触发电压:1.5 V
最大维持电流:30 mAJESD-609代码:e3
最大漏电流:0.5 mA最大通态电压:1.5 V
最高工作温度:125 °C最低工作温度:-40 °C
最大均方根通态电流:16 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子面层:Matte Tin (Sn)触发设备类型:TRIAC
Base Number Matches:1

BTA216X-600B 数据手册

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Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA216X series B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high commutation  
triacs in a full pack, plastic envelope  
intended for use in circuits where high  
static and dynamic dV/dt and high  
dI/dt can occur. These devices will  
commutate the full rated rms current  
at the maximum rated junction  
temperature, without the aid of a  
snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA216X- 500B 600B 800B  
VDRM  
Repetitive peak off-state  
voltages  
500  
600  
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
16  
140  
16  
140  
16  
140  
A
A
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
16  
A
Ths 38 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
140  
150  
98  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
October 1997  
1
Rev 1.200  

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