5秒后页面跳转
BTA212-800B PDF预览

BTA212-800B

更新时间: 2024-11-20 22:11:19
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
6页 49K
描述
Three quadrant triacs high commutation

BTA212-800B 数据手册

 浏览型号BTA212-800B的Datasheet PDF文件第2页浏览型号BTA212-800B的Datasheet PDF文件第3页浏览型号BTA212-800B的Datasheet PDF文件第4页浏览型号BTA212-800B的Datasheet PDF文件第5页浏览型号BTA212-800B的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Three quadrant triacs  
high commutation  
BTA212 series B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high commutation  
triacs in a plastic envelope intended  
foruseincircuitswherehighstaticand  
dynamic dV/dt and high dI/dt can  
occur. These devices will commutate  
the full rated rms current at the  
maximum rated junction temperature,  
without the aid of a snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
500B 600B 800B  
BTA212-  
VDRM  
Repetitive peak off-state  
voltages  
500  
600  
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
12  
95  
12  
95  
12  
95  
A
A
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
tab  
T2  
T1  
2
main terminal 2  
gate  
3
G
1 2 3  
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
12  
A
Tmb 99 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
95  
105  
45  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
September 1997  
1
Rev 1.200  

BTA212-800B 替代型号

型号 品牌 替代类型 描述 数据表
BTA316-800B WEEN

功能相似

Planar passivated high commutation three quadrant triac in a SOT78 plastic package intende

与BTA212-800B相关器件

型号 品牌 获取价格 描述 数据表
BTA212-800B,127 NXP

获取价格

BTA212-800B
BTA212-800C NXP

获取价格

Three quadrant triacs high commutation
BTA212-800E NXP

获取价格

Three quadrant triacs guaranteed commutation
BTA212-800F NXP

获取价格

Three quadrant triacs guaranteed commutation
BTA212B NXP

获取价格

Three quadrant triacs high commutation
BTA212B_SERIES_B ETC

获取价格

Three quadrant triacs high commutation
BTA212B_SERIES_D/E_AND_F ETC

获取价格

Three quadrant triacs guaranteed commutation
BTA212B-500B NXP

获取价格

Three quadrant triacs high commutation
BTA212B-500C NXP

获取价格

Three quadrant triacs high commutation
BTA212B-600B NXP

获取价格

Three quadrant triacs high commutation