Datasheet > BT152-400R

BT152-400R

更新时间： 2024-04-09 18:59:36

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
8页	886K
描述
Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

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BT152-400R 数据手册

Product specification

WeEnꢀSemiconductors

Thyristors

BT152 series

IGT(Tj)

IGT(25 C)

BT152

IT / A

BT152

Tj = 125 C

Tj = 25 C

2.5

Vo = 1.12 V

Rs = 0.015 ohms

max

typ

1.5

0.5

VT / V

1.5

-50

Tj / C

100

150

Fig.7. Normalised gate trigger current

I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

IL(Tj)

IL(25 C)

BT152

Zth j-mb (K/W)

BT145

2.5

0.1

1.5

0.01

0.001

0.5

10us

0.1ms

1ms

10ms

tp / s

0.1s

10s

-50

Tj / C

100

150

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C),

versus junction temperature T_j.

Fig.11. Transient thermal impedance Z_{th j-mb}, versus

pulse width t_p.

IH(Tj)

IH(25 C)

dVD/dt (V/us)

10000

BT152

2.5

RGK = 100 Ohms

1000

gate open circuit

1.5

100

0.5

-50

Tj / C

100

150

100

150

Tj / C

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),

versus junction temperature T_j.

Fig.12. Typical, critical rate of rise of off-state voltage,

dV_D/dt versus junction temperature T_j.

September 2018

Rev 1.300

1 2 3 456 7 8

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