Datasheet > BT152B-1200T

BT152B-1200T

更新时间： 2024-04-09 19:01:00

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	680K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 surface mountable plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.

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BT152B-1200T 数据手册

BT152B-1200T

SCR

Rev.01 - 19 July 2023

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectiﬁer (SCR) in a TO263 surface mountable plastic package

intended for use in applications requiring very high inrush current capability and high bidirectional

blocking voltage capability.

2. Features and beneﬁts

•

High junction operating temperature capability (T_j(max)= 150 °C)

•

Planar passivated for voltage ruggedness and reliability

High voltage capacity

Very high current surge capability

Surface mountable package

3. Applications

•

DC motor control

Power converter

Solid State Relay (SSR)

Uninterruptible Power Supply (UPS)

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

V_RRM

I_T(RMS)

I_TSM

repetitive peak reverse

voltage

1200

RMS on-state current

half sine wave; T_mb≤ 125 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on-

state current

half sine wave; T_j(init)= 25 °C; t_p= 10 ms;

Fig. 4; Fig. 5

250

half sine wave; T_j(init)= 25 °C; t_p= 8.3 ms

275

150

Typ

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Notes Min

Max

Unit

I_GT

I_H

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

V_D= 12 V; T_j= 25 °C; Fig. 9

holding current

on-state voltage

V_T

I_T= 20 A; T_j= 25 °C; Fig. 10

1.15

1.50

Dynamic characteristics

dV_D/dt rate of rise of oﬀ-state

voltage

V_DM= 804 V; T_j= 150 °C; (V_DM= 67% of

V_DRM); exponential waveform; gate open

circuit

1000

V/μs

12 3 4 5 6 7...12

中文翻译

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