Datasheet > BT152B-800R

BT152B-800R

更新时间： 2024-09-25 17:01:11

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描述
Passivated thyristors in a plastic envelope suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance.

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BT152B-800R 数据手册

BT152B-800R

Thyristor

Rev.02 - 26 November 2019

Product data sheet

1. General description

Passivated thyristors in a plastic envelope suitable for surface mounting, intended for use in

applications requiring high bidirectional blocking voltage capability and high thermal cycling

performance.

2. Features and benefits

•

High blocking voltage suitable for high voltage applications

•

High thermal cycling performance

3. Applications

•

General purpose switching

Protection Circuits

Motor control

Industrial and domestic lighting

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

repetitive peak off-

state voltage

800

V_RRM

I_T(AV)

repetitive peak reverse

voltage

800

average on-state

current

half sine wave; T_mb≤ 104 °C; Fig. 1;

Fig. 2; Fig. 3

I_T(RMS)

I_TSM

RMS on-state current

non-repetitive peak on- T_j(init)= 25 °C; t_p= 10 ms; Fig. 4; Fig. 5

state current

200

220

125

T_j(init)= 25 °C; t_p= 8.3 ms

T_j

junction temperature

°C

Static characteristics

I_GT

V_T

gate trigger current

on-state voltage

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

I_T= 40 A; T_j= 25 °C; Fig. 10

1.45

1.75

Dynamic characteristics

dV_D/dt rate of rise of off-state V_DM= 536 V; T_j= 125 °C; R_GK= 100 Ω;

200

300

V/µs

voltage

(V_DM= 67% of V_DRM); exponential

waveform; gate open circuit

12 3 4 5 6 7...12

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