Datasheet > BT152-800R

BT152-800R

更新时间： 2024-04-09 19:00:45

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	253K
描述
Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.

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BT152-800R 数据手册

BT152-800R

SCR

5 September 2018

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package intended

for use in applications requiring very high inrush current capability and high thermal cycling

performance.

2. Features and benefits

•

High thermal cycling performance

•

High voltage capability

Planar passivated for voltage ruggedness and reliability

Very high current surge capability

3. Applications

•

Ignition circuits

Motor control

Protection circuits e.g. SMPS inrush current

Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

800

I_T(AV)

average on-state

current

half sine wave; T_mb≤ 103 °C; Fig. 1

half sine wave; Fig. 2; Fig. 3

I_T(RMS)

I_TSM

RMS on-state current

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

200

state current

t_p= 10 ms; Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C;

t_p= 8.3 ms

220

125

T_j

junction temperature

°C

Static characteristics

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C; Fig. 7

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 536 V; T_j= 125 °C; (V_DM= 67%

200

300

V/µs

voltage

of V_DRM); exponential waveform; gate

open circuit; Fig. 12

12 3 4 5 6 7...12

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