Datasheet > BT152-500RT,127

BT152-500RT,127

更新时间： 2024-02-29 05:52:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	200K
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BT152-500RT

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BT152-500RT,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-220
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.7	Base Number Matches：	1

BT152-500RT,127 数据手册

BT152-500RT

O-220AB

SCR

Rev. 2 — 9 June 2011

Product data sheet

1. Product profile

1.1 General description

Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package

intended for use in applications requiring very high inrush current capability, high junction

temperature capability and high thermal cycling performance.

1.2 Features and benefits

 High junction temperature capability

 High thermal cycling performance

 Planar passivated for voltage

ruggedness and reliability

 Very high current surge capability

1.3 Applications

 Ignition circuits

 Motor control

 Protection circuits e.g. SMPS inrush

current

 Voltage regulation

1.4 Quick reference data

Table 1.

Symbol

V_DRM

Quick reference data

Parameter

Conditions

Min Typ Max Unit

repetitive peak off-state

voltage

500

220

200

V_RRM

I_TSM

repetitive peak reverse

voltage

non-repetitive peak

on-state current

half sine wave; T_j(init)= 25 °C;

t_p= 8.3 ms

half sine wave; T_j(init)= 25 °C;

t_p= 10 ms; see Figure 4;

see Figure 5

I_T(AV)

average on-state

current

half sine wave; T_mb≤ 122 °C;

see Figure 3

I_T(RMS)

RMS on-state current

half sine wave; see Figure 1;

see Figure 2

Static characteristics

I_GTgate trigger current

V_D= 12 V; I_T= 100 mA;

T_j= 25 °C; see Figure 7

12 3 4 5 6 7...12

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