Datasheet > BT152-400R

BT152-400R

更新时间： 2024-04-09 18:59:36

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
8页	886K
描述
Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BT152-400R 数据手册

Product specification

WeEn Semiconductors

Thyristors

BT152 series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance

junction to mounting base

Thermal resistance

junction to ambient

1.1

K/W

in free air

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_GT

I_L

I_H

V_T

Gate trigger current

Latching current

Holding current

V_D= 12 V; I_T= 0.1 A

V_D= 12 V; I_GT= 0.1 A

I_T= 40 A

1.4

0.6

0.4

0.2

1.75

1.5

On-state voltage

Gate trigger voltage

V_GT

V_D= 12 V; I_T= 0.1 A

V_D= V_DRM(max); I_T= 0.1 A; T_j= 125 ˚C

Off-state leakage current V_D= V_DRM(max); V_R= V_RRM(max); T_j= 125 ˚C

0.25

I_D, I_R

1.0

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

dV_D/dt

Critical rate of rise of

off-state voltage

Gate controlled turn-on

time

Circuit commutated

turn-off time

V_DM= 67% V_DRM(max); T_j= 125 ˚C;

exponential waveform gate open circuit

V_D= V_DRM(max); I_G= 0.1 A; dI_G/dt = 5 A/μs;

I_TM= 40 A

V_D= 67% V_DRM(max); T_j= 125 ˚C;

I_TM= 50 A; V_R= 25 V; dI_TM/dt = 30 A/μs;

dV_D/dt = 50 V/μs; R_GK= 100 Ω

200

300

V/μs

μs

t_gt

t_q

μs

September 2018

Rev 1.300

1 234 5 6 7 8

下载PDF

与BT152-400R相关器件

型号	品牌	描述	获取价格	数据表
BT152-400R/B	ETC	THYRISTOR 20A 400V	获取价格
BT152-500	TGS	Triacs sensitive gate	获取价格
BT152-500RT	NXP	SCR, 20 A, 32 mA, 500 V, SOT78	获取价格
BT152-500RT	WEEN	Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package inten	获取价格
BT152-500RT,127	NXP	BT152-500RT	获取价格
BT152-500RT_11	NXP	High junction temperature capability Very high current surge capability	获取价格