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BT148W-600R PDF预览

BT148W-600R

更新时间: 2024-11-12 22:14:43
品牌 Logo 应用领域
恩智浦 - NXP 栅极光电二极管
页数 文件大小 规格书
7页 57K
描述
Thyristors logic level

BT148W-600R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:PLASTIC PACKAGE-4
针数:4Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:7.51
其他特性:SENSITIVE GATE, LOGIC LEVEL COMPATIBLE外壳连接:ANODE
标称电路换相断开时间:100 µs配置:SINGLE
关态电压最小值的临界上升速率:5 V/us最大直流栅极触发电流:0.2 mA
最大直流栅极触发电压:1.5 V最大维持电流:6 mA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
最大漏电流:0.5 mA湿度敏感等级:1
通态非重复峰值电流:10 A元件数量:1
端子数量:4最大通态电流:600 A
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1 A重复峰值关态漏电流最大值:500 µA
断态重复峰值电压:600 V重复峰值反向电压:600 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

BT148W-600R 数据手册

 浏览型号BT148W-600R的Datasheet PDF文件第2页浏览型号BT148W-600R的Datasheet PDF文件第3页浏览型号BT148W-600R的Datasheet PDF文件第4页浏览型号BT148W-600R的Datasheet PDF文件第5页浏览型号BT148W-600R的Datasheet PDF文件第6页浏览型号BT148W-600R的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Thyristors  
logic level  
BT148W series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
thyristors in  
a
plastic envelope  
suitable for surface mounting,  
intended for use in general purpose  
switching and phase control  
applications. These devices are  
intended to be interfaced directly to  
microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
BT148W- 400R 500R 600R  
VDRM  
VRRM  
IT(AV)  
,
Repetitive peak off-state  
400  
500  
600  
V
voltages  
Average on-state current  
RMS on-state current  
Non-repetitive peak on-state  
current  
0.6  
1
10  
0.6  
1
10  
0.6  
1
10  
A
A
A
IT(RMS)  
ITSM  
PINNING - SOT223  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
4
a
k
2
anode  
gate  
3
g
2
3
1
tab anode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-400R -500R -600R  
VDRM, VRRM Repetitive peak off-state  
voltages  
-
4001 5001 6001  
V
IT(AV)  
IT(RMS)  
ITSM  
Average on-state current half sine wave; Tsp 112 ˚C  
-
-
0.6  
1
A
A
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave; Tj = 25 ˚C prior to  
surge  
t = 10 ms  
-
-
-
-
10  
11  
0.5  
50  
A
A
t = 8.3 ms  
t = 10 ms  
ITM = 4 A; IG = 200 mA;  
dIG/dt = 200 mA/µs  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
A2s  
A/µs  
IGM  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
1
5
5
1.2  
0.12  
150  
1252  
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
-
-
over any 20 ms period  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kor less.  
October 1997  
1
Rev 1.300  

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