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BT137MSERIESE

更新时间: 2024-11-12 23:35:51
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恩智浦 - NXP 可控硅
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6页 55K
描述
Triacs sensitive gate

BT137MSERIESE 数据手册

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Philips Semiconductors  
Product specification  
Triacs  
sensitive gate  
BT137S series E  
BT137M series E  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
triacs in a plastic envelope, suitable  
forsurfacemounting, intended foruse  
in general purpose bidirectional  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BT137S (or BT137M)- 500E 600E 800E  
VDRM  
Repetitive peak off-state  
500  
600  
800  
V
switching  
and  
phase  
control  
voltages  
applications, where high sensitivity is  
required in all four quadrants.  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
8
65  
8
65  
8
65  
A
A
PINNING - SOT428  
PIN CONFIGURATION  
SYMBOL  
PIN  
NUMBER  
Standard Alternative  
tab  
S
M
1
2
MT1  
MT2  
gate  
MT2  
gate  
MT2  
MT1  
MT2  
T2  
T1  
2
3
G
1
3
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 102 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
8
A
t = 20 ms  
-
-
-
65  
71  
21  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
October 1997  
1
Rev 1.200  

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