Philips Semiconductors
Product specification
Triacs
sensitive gate
BT137S series E
BT137M series E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
triacs in a plastic envelope, suitable
forsurfacemounting, intended foruse
in general purpose bidirectional
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BT137S (or BT137M)- 500E 600E 800E
VDRM
Repetitive peak off-state
500
600
800
V
switching
and
phase
control
voltages
applications, where high sensitivity is
required in all four quadrants.
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
8
65
8
65
8
65
A
A
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
NUMBER
Standard Alternative
tab
S
M
1
2
MT1
MT2
gate
MT2
gate
MT2
MT1
MT2
T2
T1
2
3
G
1
3
tab
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
5001
6001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Tmb ≤ 102 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
8
A
t = 20 ms
-
-
-
65
71
21
A
A
t = 16.7 ms
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
t = 10 ms
A2s
ITM = 12 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
T2+ G-
-
T2- G-
-
T2- G+
-
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
VGM
PGM
PG(AV)
Tstg
Tj
-
V
-
-
W
over any 20 ms period
W
-40
-
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1997
1
Rev 1.200