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BT136-600D,127 PDF预览

BT136-600D,127

更新时间: 2024-11-18 21:20:51
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描述
BT136-600D

BT136-600D,127 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220包装说明:PLASTIC, SC-46, 3 PIN
针数:3Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:7.51
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLE最大直流栅极触发电流:5 mA
最大直流栅极触发电压:1.5 V最大维持电流:10 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大漏电流:0.5 mA
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:4 A重复峰值关态漏电流最大值:500 µA
断态重复峰值电压:600 V子类别:TRIACs
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT136-600D,127 数据手册

 浏览型号BT136-600D,127的Datasheet PDF文件第2页浏览型号BT136-600D,127的Datasheet PDF文件第3页浏览型号BT136-600D,127的Datasheet PDF文件第4页浏览型号BT136-600D,127的Datasheet PDF文件第5页浏览型号BT136-600D,127的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136 series D  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated, sensitive gate triacs in a  
plastic envelope, intended for use in  
general purpose bidirectional switching  
and phase control applications. These  
devices are intended to be interfaced  
directly to microcontrollers, logic  
integrated circuits and other low power  
gate trigger circuits.  
SYMBOL  
PARAMETER  
MAX. UNIT  
BT136- 600D  
VDRM  
IT(RMS)  
ITSM  
Repetitive peak off-state voltages  
RMS on-state current  
Non-repetitive peak on-state current  
600  
4
V
A
A
25  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
tab  
T2  
T1  
2
main terminal 2  
gate  
3
G
1 2 3  
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600D  
600  
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance  
full cycle  
-
-
-
-
-
60  
3.0  
3.7  
-
K/W  
K/W  
K/W  
junction to mounting base half cycle  
Thermal resistance  
junction to ambient  
in free air  
June 2001  
1
Rev 1.400  

BT136-600D,127 替代型号

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