BT136-600D

更新时间： 2024-11-19 22:54:07

品牌	Logo	应用领域
恩智浦 - NXP		栅极可控硅三端双向交流开关
页数	文件大小	规格书
6页	49K
描述
Triacs logic level

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BT136-600D 数据手册

Philips Semiconductors

Product specification

Triacs

logic level

BT136 series D

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated, sensitive gate

triacs in a plastic envelope, intended

for use in general purpose

bidirectional switching and phase

control applications. These devices

are intended to be interfaced directly

to microcontrollers, logic integrated

circuits and other low power gate

trigger circuits.

SYMBOL PARAMETER

MAX. MAX. UNIT

BT136- 500D 600D

500 600

V_DRM

I_T(RMS)

I_TSM

Repetitive peak off-state voltages

RMS on-state current

Non-repetitive peak on-state current

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

tab

main terminal 2

gate

1 2 3

tab main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_mb≤ 107 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

3.1

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 6 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

August 1997

Rev 1.200

12 3 4 5 6

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BT136-600D 替代型号

型号	品牌	替代类型	描述	数据表
BT136-600D,127	NXP	完全替代	BT136-600D
T410-600T	STMICROELECTRONICS	功能相似	4A TRIACS

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