Datasheet > BT136B_SERIES_E

BT136B_SERIES_E

更新时间： 2024-11-17 23:35:51

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描述
Triacs sensitive gate

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BT136B_SERIES_E 数据手册

Philips Semiconductors

Product specification

Triacs

sensitive gate

BT136B series E

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated, sensitive gate triacs in a

plastic envelope suitable for surface

mounting, intended for use in general

purpose bidirectional switching and

phase control applications, where

high sensitivity is required in all four

quadrants.

SYMBOL PARAMETER

MAX.

UNIT

BT136B-

600E

600

800E

800

V_DRM

Repetitive peak off-state

voltages

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

main terminal 2

gate

mb main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_mb≤ 107 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

3.1

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 6 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

June 2001

Rev 1.300

12 3 4 5 6

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BT136B-500F	NXP	获取价格	Triacs
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