Datasheet > BSS225_11

BSS225_11

更新时间： 2024-11-09 09:00:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	203K
描述
SIPMOS Small-Signal-Transistor

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中文翻译

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数据手册

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BSS225_11 数据手册

Type

BSS225

SIPMOS^®Small-Signal-Transistor

Feature

Product Summary

600

V _DS

• n-channel

R _DS(on),max

I _D

• enhancement mode

0.09

• Logic level

• dv /dt rated

SOT89

Type

Package

Pb-free

Tape and Reel Information

L6327: 3000PCS/reel

Marking

BSS225

SOT89

Yes

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

I _D=0.09 A,

Continuous drain current

0.09

0.073

0.36

I _D,pulse

dv /dt

V _GS

Pulsed drain current

Reverse diode dv /dt

Gate source voltage

_DS=480 V,

di /dt =200 A/µs,

_j,max=150 °C

kV/µs

±20

ESD sensitivity (HBM) as per

MIL-STD 883

Class 1a

P _tot

T _A=25 °C

Power dissipation

1.00

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Rev. 1.23

page 1

2011-03-08

12 3 4 5 6 7...9

中文翻译

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