Datasheet > BSS138BK

BSS138BK

更新时间： 2024-04-09 19:02:32

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	555K
描述
60V, N Channel, Small Signal MOSFETs

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中文翻译

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数据手册

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BSS138BK 数据手册

N-Channel Enhancement Mode MOSFET

BSS138BK

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

V_GS= 0V, I_D= 250μA

V_DS= 60V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

μA

±1 0

On Characteristics

V_GS= 10V, I_D= 0.5A

V_GS= 4.5V, I_D= 0.2A

V_GS= 2.5V, I_D= 0.1A

V_DS= V_GS, I_D= 250μA

V_GS= 0V, f = 1MHz

0.56

0.64

0.92

1.0

0.7

1.2

R_DS(ON)

Static Drain-Source On-resistance ^*2

V_GS(TH)

R_G

Gate Threshold Voltage

Gate Resistance

0.8

1.5

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Input Capacitance

V_GS= 0V

Output Capacitance

V_DS= 30V

f = 1.0MHz

Reverse Transfer Capacitance

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time ^*3

Turn-on Rise Time ^*3

Turn-Off Delay Time ^*3

Turn-Off Fall Time ^*3

Total Gate-Charge

V_DD= 30V

V_GS= 10V

I_D= 0.36A

R_G= 6Ω

2.3

0.6

0.5

Q_G

V_DS= 30V

V_GS= 4.5V

I_D= 0.2A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

Source-Drain Diode Characteristics

V_SD

Diode Forward Voltage ^*2

Notes:

I_S= 0.5A, V_GS= 0 V

0.8

1.4

1. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%

3. Guaranteed by design, not subject to production

MTM1398A: September 2023 [2.0]

www.gmesemi.com

123 4 5 6

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