5秒后页面跳转
BSS138DWQ-7 PDF预览

BSS138DWQ-7

更新时间: 2024-02-14 14:04:12
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 367K
描述
Low On-Resistance

BSS138DWQ-7 数据手册

 浏览型号BSS138DWQ-7的Datasheet PDF文件第2页浏览型号BSS138DWQ-7的Datasheet PDF文件第3页浏览型号BSS138DWQ-7的Datasheet PDF文件第4页浏览型号BSS138DWQ-7的Datasheet PDF文件第5页浏览型号BSS138DWQ-7的Datasheet PDF文件第6页 
BSS138DWQ  
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Product Summary  
Features  
Low On-Resistance  
ID Max  
V(BR)DSS  
RDS(ON) Max  
3.5Ω @ VGS = 10V  
TA = +25°C  
Low Gate Threshold Voltage  
Low Input Capacitance  
50V  
200mA  
Fast Switching Speed  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Notes 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
Description  
This MOSFET is designed to minimize the on-state resistance  
(RDS(ON)), yet maintain superior switching performance, making it  
ideal for high efficiency power management applications.  
Mechanical Data  
Applications  
Load Switch  
Case: SOT-363  
Case Material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.  
Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Weight: 0.006 grams (Approximate)  
SOT363  
D2  
G1  
S1  
S2  
G2  
D1  
Top View  
Internal Schematic  
Top View  
Ordering Information (Note 5)  
Part Number  
BSS138DWQ-7  
BSS138DWQ-13  
Case  
SOT363  
SOT363  
Packaging  
3,000/Tape & Reel  
10,000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.  
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
K38 = Product Type Marking Code  
YM = Date Code Marking  
Y or = Year (ex: D = 2016)  
YM  
8 3 K  
K38  
M Y  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2005  
2006  
2016  
2017  
2018  
2019  
2020  
2021  
2022  
2023  
Code  
S
T
D
E
F
G
H
I
J
K
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
1 of 6  
www.diodes.com  
April 2016  
© Diodes Incorporated  
BSS138DWQ  
Document number: DS38849 Rev. 1 - 2  

与BSS138DWQ-7相关器件

型号 品牌 获取价格 描述 数据表
BSS138E YANGJIE

获取价格

SOT-523
BSS138E HC

获取价格

SOT-23-3
BSS138E6327 INFINEON

获取价格

Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Meta
BSS138E-6327 INFINEON

获取价格

Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Meta
BSS138E6433 INFINEON

获取价格

Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Meta
BSS138EDW BL Galaxy Electrical

获取价格

0.36A, 50V, 0.31W, N Channel, Dual MOSFETs
BSS138ES BL Galaxy Electrical

获取价格

0.36A, 50V, 0.35W, N Channel, Small Signal MOSFETs
BSS138ESL BL Galaxy Electrical

获取价格

0.36A, 50V, 0.15W, N Channel, Small Signal MOSFETs
BSS138EST BL Galaxy Electrical

获取价格

0.36A, 50V, 0.15W, N Channel, Small Signal MOSFETs
BSS138ESV BL Galaxy Electrical

获取价格

0.36A, 50V, 0.25W, N Channel, Small Signal MOSFETs