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BSS138DW-7-F

更新时间： 2024-02-19 17:44:12
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
5页 109K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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BSS138DW-7-F 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
Factory Lead Time：15 weeks风险等级：0.94
Samacsys Confidence：4Samacsys Status：Released
Samacsys PartID：279855Samacsys Pin Count：6
Samacsys Part Category：TransistorSamacsys Package Category：SOT23 (6-Pin)
Samacsys Footprint Name：SOT-363Samacsys Released Date：2016-12-03 16:52:19
Is Samacsys：N其他特性：HIGH RELIABILITY
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：50 V
最大漏极电流 (Abs) (ID)：0.2 A最大漏极电流 (ID)：0.2 A
最大漏源导通电阻：3.5 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：8 pFJESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified参考标准：AEC-Q101
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

BSS138DW-7-F 数据手册

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BSS138DW  
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
•
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Available in Lead Free/RoHS Compliant Version (Note 4)  
Qualified to AEC-Q101 Standards for High Reliability  
"Green" Device (Notes 5 and 6)  
•
•
Case: SOT-363  
Case Material: Molded Plastic. “Green” Molding Compound  
(Note 6). UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating) Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.006 grams (approximate)  
•
•
•
•
•
•
SOT-363  
D2  
G1  
S1  
S2  
G2  
D1  
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VDGR  
VGSS  
ID  
BSS138DW  
Units  
V
50  
50  
Drain-Gate Voltage (Note 3)  
V
Gate-Source Voltage  
Drain Current (Note 1)  
Continuous  
Continuous  
V
±20  
200  
mA  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Rθ  
BSS138DW  
200  
Units  
mW  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
°C/W  
°C  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Symbol Min  
Typ Max Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
50  
⎯
⎯
75  
⎯
⎯
V
µA  
nA  
BVDSS  
IDSS  
IGSS  
⎯
0.5  
VGS = 0V, ID = 250μA  
VDS = 50V, VGS = 0V  
VGS = ±20V, VDS = 0V  
±100  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
Static Drain-Source On-Resistance  
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
0.5  
⎯
100  
1.2  
1.4  
⎯
1.5  
3.5  
⎯
V
Ω
mS  
VGS(th)  
RDS (ON)  
gFS  
VDS = VGS, ID = 250μA  
VGS = 10V, ID = 0.22A  
VDS =25V, ID = 0.2A, f = 1.0KHz  
50  
25  
8.0  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance  
VDS = 10V, VGS = 0V, f = 1.0MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
20  
20  
ns  
tD(ON)  
tD(OFF)  
⎯
⎯
⎯
⎯
VDD = 30V, ID = 0.2A,  
Turn-Off Delay Time  
ns RGEN = 50Ω  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. RGS ≤ 20KΩ.  
4. No purposefully added lead.  
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 5  
www.diodes.com  
September 2009  
© Diodes Incorporated  
BSS138DW  
Document number: DS30203 Rev. 12 - 2  
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中文翻译

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BSS138DW-7-F 替代型号

型号 品牌 替代类型 描述 数据表
BSS138DW-7 DIODES

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 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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